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| AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG (B) A .120 x 45 B 1 ED C FULL R FEATURES: * Internal Input/Output Matching Networks * PG = 6.0 dB at 1000W/1090 MHz * OmnigoldTM Metalization System M 2 .208 F .210 I JK L .050 NOM. G H 3 4X.060 R MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG JC 65 A 55 V 3.5 V 2900 W @ TC 25 C -65 C to +200 C -65 C to +200 C 0.06 C/W DIM A B C D E F G H I J K L M .445 / 11.30 .120 / 3.25 .411 / 10.44 .825 / 20.96 .525 / 13.34 1.255 / 31.88 1.675 / 42.55 .002 / 0.05 .095 / 2.41 .115 / 2.92 MINIMUM inches / mm MAXIMUM inches / mm .373 / 9.47 .205 / 5.21 .385 / 9.78 .130 / 3.30 .421 / 10.69 .865 / 21.97 .535 / 13.59 1.265 / 32.18 1.685 / 42.80 .006 / 0.15 .105 / 2.67 .135 / 3.43 .250 / 6.35 .457 / 11.61 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS SYMBOL BVCES BVEBO hFE POUT PIN PG C tr 1 VSRW IE = 50 mA VCE = 5.0 V TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 1.0 A MINIMUM TYPICAL MAXIMUM 65 3.5 10 1000 250 6.0 43 70 9:1 UNITS V V --W W dB % ns F = 1090 MHz VCC = 45 V PW = 10 sec DF = 1 % F = 1030 MHz Note 1: At rated output power and pulse conditions. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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